Edge States in p-n Junctions in Inverted Band HgTe Quantum Wells
نویسندگان
چکیده
We investigate current noise of lateral p-n junctions, electrostatically defined in 14 nm–wide HgTe-based quantum wells (QWs) with inverted band structure. Consistent with previous experiments on 8-10 nm QWs, the p-n junctions resistances are close to h/2e, indicating the edge states contribution to transport. Taking into account contacts heating, we find that the observed shot noise is suppressed compared to the diffusive value and is in reasonable agreement with prediction for onedimensional edge states realized along the p-n junction. Our approach looks promising for the study of short quasi-ballistic edges in topological insulators (TIs).
منابع مشابه
Quantum hall effect in n-p-n and n-2D topological insulator-n junctions.
We have studied quantized transport in HgTe wells with inverted band structure corresponding to the two-dimensional topological insulator phase (2D TI) with locally controlled density allowing n-p-n and n-2D TI-n junctions. The resistance reveals the fractional plateau 2h/e(2) in the n-p-n regime in the presence of the strong perpendicular magnetic field. We found that in the n-2D TI-n regime t...
متن کاملMagnetic properties of HgTe quantum wells
Using analytical formulas as well as a finite-difference scheme, we investigate themagnetic field dependence of the energy spectra and magnetic edge states of HgTe/CdTe-based quantum wells in the presence of perpendicular magnetic fields and hard walls for the band-structure parameters corresponding to the normal and inverted regimes. Whereas one can not find counterpropagating, spin-polarized ...
متن کاملCyclotron resonance in HgTe/CdTe-based heterostructures in high magnetic fields
: Cyclotron resonance study of HgTe/CdTe-based quantum wells with both inverted and normal band structures in quantizing magnetic fields was performed. In semimetallic HgTe quantum wells with inverted band structure, a hole cyclotron resonance line was observed for the first time. In the samples with normal band structure, interband transitions were observed with wide line width due to quantum ...
متن کاملQuantum strain sensor with a topological insulator HgTe quantum dot
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum do...
متن کاملHelical quantum states in HgTe quantum dots with inverted band structures.
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i....
متن کامل